unisonic technologies co., ltd mmbt5088/mmbt5089 npn silicon transistor www.unisonic.com.tw 1 of 6 copyright ? 2010 unisonic technologies co., ltd qw-r206-033,b npn general purpose amplifier ? description the devices are designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 a to 50ma. ? ordering information pin assignment ordering number package 1 2 3 packing mmbt5088g-ae3-r sot-23 e b c tape reel mmbt5089g-ae3-r sot-23 e b c tape reel ? marking mmbt5088 mmbt5089
mmbt5088/mmbt5089 npn silicon transistor unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r206-033,b ? absolute maximum rating (t a =25 , unless otherwise specified) parameter symbol ratings unit mmbt5088 30 collector-emitter voltage mmbt5089 v ceo 25 v mmbt5088 35 collector-base voltage mmbt5089 v cbo 30 v emitter-base voltage v ebo 4.5 v collector current-continuous i c 100 ma total device dissipation 350 mw linear derating factor above t a = 25 p d 2.8 mw/ junction temperature t j 125 c operating temperature t opr -40 ~ +150 c storage temperature t stg -40 ~ +150 c 1. absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. these ratings are based on a maximum junction temperature of 150 degrees c. note: 3. these are steady state limits. the factory should be consulted on applicat ions involving pulsed or low duty cycle operations. ? thermal data (t a =25c, unless otherwise specified) parameter symbol ratings unit junction to ambient ja 357 /w ? electrical characteristics (ta=25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics mmbt5088 30 v collector-emitter breakdown voltage (note) mmbt5089 bv ceo i c =1.0ma, i b =0 25 v mmbt5088 35 v collector-base breakdown voltage mmbt5089 bv cbo i c =100 a, i e =0 30 v mmbt5088 v cb =20v, i e =0 50 na collector cut-off current mmbt5089 i cbo v cb =15v, i e =0 50 na v eb =3.0v, i c =0 50 na emitter cutoff current i ebo v eb =4.5v, i c =0 100 na on characteristics mmbt5088 300 900 mmbt5089 v ce =5.0v, i c =100 a 400 1200 mmbt5088 350 mmbt5089 v ce =5.0v, i c =1.0ma 450 mmbt5088 300 dc current gain mmbt5089 h fe v ce =5.0v, i c =10ma(note) 400 collector-emitter satu ration voltage v ce(sat) i c =10ma, i b =1.0ma 0.5 v base-emitter on voltage v be(on) i c =10ma, v ce =5.0v 0.8 v small signal characteristics current gain-bandwidth product f t v ce =5.0ma, i c =500 a, f=20mhz 50 mhz collector-base capacitance c cb v cb =5.0v, i e =0, f=100khz 4 pf emitter-base capacitance c eb v eb =0.5v, i c =0, f=100khz 10 pf mmbt5088 350 1400 small-signal current gain mmbt5089 h fe v ce =5.0v, i c =1.0ma, f=1.0khz 450 1800 mmbt5088 3.0 db noise figure mmbt5089 nf v ce =5.0v, i c =100 a, r s =10k , f=10khz ~ 15.7khz 2.0 db note: pulse test: pulse width 300 s, duty cycle 2.0%.
mmbt5088/mmbt5089 npn silicon transistor unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r206-033,b ? typical characteristics typical pulsed current gain vs collector current typical pulsed current gain, h fe 1200 1000 800 600 400 200 0 0.01 0.03 0.10.3131030100 collector current, i c (ma) v ce =5.0v collector-emitter saturation voltage vs. collector current collector-emitter voltage, v ce(sat) (v) 0.3 0.25 0.2 0.15 0.1 0.05 0.1 110 100 collector current, i c (ma) =10 125 c c 25 c -40 c 25 c -40 125 c collector-emitter voltage, v be(sat) (v) base-emitter on voltage, v be(on) (v) collector-cutoff current vs ambient temperature 10 1 25 75 125 150 v cb =45v -0.1 50 100 ambient temperature, t a ( ) input and output capacitance vs reverse bias voltage 5 1 081620 f=1.0mhz 0 412 4 3 2 c te c ob reverse bias voltage (v)
mmbt5088/mmbt5089 npn silicon transistor unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r206-033,b ? typical characteristics(cont.) collector voltage, v ce (v) characteristics relative to value at ta=25 noise figure, nf (db) noise figure, nf (db) power dissipation, p d (mw) source resistance, r s ( )
mmbt5088/mmbt5089 npn silicon transistor unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r206-033,b ? typical characteristics(cont.) contours of constant narrow band noise figure source resistance, r s ( ) 10,000 1 10 1,000 100 5,000 2,000 1,000 500 200 100 collector current, i c (a) v ce =5.0v f=1.0khz bandwidth=200hz 8.0db 6.0db 4.0db 3.0db 2.0db contours of constant narrow band noise figure source resistance, r s ( ) 10,000 1 10 1,000 100 5,000 2,000 1,000 500 200 100 collector current, i c (a) v ce =5.0v f=10khz bandwidth=2.0khz 8.0db 4.0db 3.0db 2.0db 1.0db 6.0db source resistance, r s ( ) 5 . 0 d b 6 . 0 d b characteristics relative to value (v ce =5v) characteristics relative to value (t a =25 ) characteristics relative to value (i c =1ma)
mmbt5088/mmbt5089 npn silicon transistor unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r206-033,b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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